THE PERFORMANCE OF CUINSE2 CDS SOLAR-CELLS FABRICATED BY THE SANDWICHSTRUCTURE TECHNIQUE/

The solar cell structure is based upon a heterojunction of p-type CuIn Se2 (CIS) and n-type CdS or mixed CdZnS. The use of a mixed CdZnS laye r is reported to increase the open circuit voltage. The cells have bee n fabricated using the stacked elemental layer (SEL) technique for the fabrication of CIS thin films. The effect of layer resistivities on t he performance of the device has been studied. The photoresponse was a lso determined and an essentially flat region between 0.6 and 1.0 mum was found. Dark and light/V characteristics in ambient and different s olar cell temperatures have been investigated. Capacitance voltage fre quency relationships were determined. A photovoltaic effect was observ ed with an ELH illumination (85 MW cm-2). Conversion efficiencies up t o 5.2% were obtained. The results are discussed and recommendations fo r future work are suggested.