NUMERICAL-CALCULATION OF EQUILIBRIUM CRITICAL THICKNESS IN STRAINED-LAYER EPITAXY

Citation
Jr. Downes et al., NUMERICAL-CALCULATION OF EQUILIBRIUM CRITICAL THICKNESS IN STRAINED-LAYER EPITAXY, Semiconductor science and technology, 9(6), 1994, pp. 1265-1267
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
9
Issue
6
Year of publication
1994
Pages
1265 - 1267
Database
ISI
SICI code
0268-1242(1994)9:6<1265:NOECTI>2.0.ZU;2-Q
Abstract
We calculate by numerical integration the energy of a strained layer i n an infinite isotropic continuous elastic medium with and without a m isfit dislocation dipole of pure edge character. The equilibrium criti cal thickness is the thickness at which these energies are the same. S olving for a range of values of misfit strain, we compare the results with some versions of the existing approximate models, and we are ther eby able to indicate the best analytic expressions to use to predict e quilibrium critical thickness.