Jr. Downes et al., NUMERICAL-CALCULATION OF EQUILIBRIUM CRITICAL THICKNESS IN STRAINED-LAYER EPITAXY, Semiconductor science and technology, 9(6), 1994, pp. 1265-1267
We calculate by numerical integration the energy of a strained layer i
n an infinite isotropic continuous elastic medium with and without a m
isfit dislocation dipole of pure edge character. The equilibrium criti
cal thickness is the thickness at which these energies are the same. S
olving for a range of values of misfit strain, we compare the results
with some versions of the existing approximate models, and we are ther
eby able to indicate the best analytic expressions to use to predict e
quilibrium critical thickness.