ABLATION OF SUBMICRON STRUCTURES ON METALS AND SEMICONDUCTORS BY FEMTOSECOND UV-LASER PULSES

Citation
P. Simon et J. Ihlemann, ABLATION OF SUBMICRON STRUCTURES ON METALS AND SEMICONDUCTORS BY FEMTOSECOND UV-LASER PULSES, Applied surface science, 110, 1997, pp. 25-29
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
110
Year of publication
1997
Pages
25 - 29
Database
ISI
SICI code
0169-4332(1997)110:<25:AOSSOM>2.0.ZU;2-3
Abstract
Ablation of submicron structures on nickel, aluminum, copper, chromium , gold, silicon and germanium is presented by short ultraviolet laser pulses (0.5 ps, 248 nm). Features like periodic line structures with a line-spacing below 400 nm, and holes with characteristic sizes well b elow 1 mu m are produced on the sample surface by single laser shot ex posure. The structures are projection printed by a Schwarzschild-objec tive (N.A. = 0.4) in air environment. A comparison of the morphology o f ablation sites of various materials with different pulse durations ( 100 fs-50 ps) is presented. The role of thermal diffusion effects is d iscussed.