ULTRAFAST PROCESSES IN SEMICONDUCTOR-DOPED GLASSES

Citation
Chb. Cruz et al., ULTRAFAST PROCESSES IN SEMICONDUCTOR-DOPED GLASSES, Applied surface science, 110, 1997, pp. 30-35
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
110
Year of publication
1997
Pages
30 - 35
Database
ISI
SICI code
0169-4332(1997)110:<30:UPISG>2.0.ZU;2-M
Abstract
We review studies of resonant and nonresonant ultrafast optical proces ses in semiconductor doped glasses, made at the University of Campinas . First we discuss measurements done in CdTe quantum-dots in glass, ex cited resonantly. In this case we observe a fast recombination, that d epends on the size of the quantum-dot. Far the smallest dots, with 3.2 nm average radius, the recovery time constant was found to be 360 fs. Then we describe the observation of the Optical Stark shift in CdSxSe 1-x semiconductor-doped glass (SDG) excited under nonresonant below ga p condition and probed with femtosecond optical pulses. An ultrafast a nd pure light-induced shift of the band edge is observed. For a pump i ntensity of 3 GW/cm(2) the band shifts by 11 meV. The response of the shift tracks the profile of the pumping pulse.