EXCIMER-LASER PATTERNING OF COPPER IN LDE (LASER DRY-ETCHING)

Citation
W. Pfleging et al., EXCIMER-LASER PATTERNING OF COPPER IN LDE (LASER DRY-ETCHING), Applied surface science, 110, 1997, pp. 194-200
Citations number
21
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
110
Year of publication
1997
Pages
194 - 200
Database
ISI
SICI code
0169-4332(1997)110:<194:EPOCIL>2.0.ZU;2-A
Abstract
Patterning of Cu bulk material and Cu foils (1 mu m in thickness) with etch rates up to 20 Angstrom/pulse is performed in an LDE (laser dry etching) process with excimer laser radiation(lambda = 248 nm) and CCl 4 as processing gas. To determine the type and the kinetic temperature of ablated molecules and the LDE incubation periods, in-situ optical- emission-spectroscopy is performed. Ex-situ electron spectroscopies (X PS, AES, ADP) give information about the chemical state of the surface , the concentration profiles in the etched regions and the etching byp roducts outside of the etched regions. Stylus profilometry is used to determine the geometries of etched features and the thickness of 'bump s' created at the beginning of the etch process. A thermal model of LD E is used to discuss the observed etch rates and incubation times.