RAMAN CHARACTERIZATION OF BI12SIO20 THIN-FILMS OBTAINED BY PULSED-LASER DEPOSITION

Citation
Jc. Alonso et al., RAMAN CHARACTERIZATION OF BI12SIO20 THIN-FILMS OBTAINED BY PULSED-LASER DEPOSITION, Applied surface science, 110, 1997, pp. 359-361
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
110
Year of publication
1997
Pages
359 - 361
Database
ISI
SICI code
0169-4332(1997)110:<359:RCOBTO>2.0.ZU;2-O
Abstract
The synthesis by pulsed laser deposition and characterization by Raman spectroscopy of Bi12SiO20 thin films are presented. The Raman spectra of the thin films are close to their crystalline counterpart only in the presence of an oxygen flow during growth. In the absence of oxygen , the observed spectra are similar to that of pure bismuth material.