P. Verardi et al., ALN THIN-FILMS DEPOSITION BY LASER-ABLATION OF AL TARGET IN NITROGEN REACTIVE ATMOSPHERE, Applied surface science, 110, 1997, pp. 371-375
Citations number
19
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Crystalline AIN thin films were deposited by laser ablation of high pu
rity Al target in nitrogen reactive atmosphere. An YAG laser (lambda=1
.06 mu m, t(FWHM)=10 ns, 0.3 J/pulse), was used as laser source. The m
aterial was collected on (100) and (111) Si wafers, The target collect
or distance was varied in the range 3-6 cm, the nitrogen pressure was
set in the range of 10(-3)-10(-1) mbar, the collectors were heated at
different temperatures between 20 and 350 degrees C. The influence of
the process parameters on the physical and piezoelectric properties of
the deposited films was analyzed. X-ray diffraction studies revealed
different crystalline orientation depending on deposition conditions:
collectors temperature, position and orientation, reactive gas pressur
e, incident laser fluence. The profile of Al and N atoms inside the fi
lm were characterized by SIMS analysis. Small oxygen traces are presen
t at collector-film interface. Depth profile X-ray photoelectron spect
roscopy confirms the existence-in particular experimental conditions-o
f only Al-N bonds inside the film.