PREPARATION OF TINI FERROELASTIC-FERROELECTRIC THIN-FILM HETEROSTRUCTURES

Active and adaptive thin film materials for 'smart' materials will lik ely be a heterostructure of several types of applications. In this inv estigation, TiNi shape memory thin films on Si(100) substrates with Ba TiO3 and PbZr1-xTixO3 (PZT) as buffer layer were deposited by the puls ed laser deposition method. The critical issues of deposition and proc essing of shape memory ferroelastic and ferroelectric materials have b een addressed to fabricate the thin film sensor-actuator heterostructu res. Characterization of the films has been done by using X-ray diffra ctometer and atomic force microscope techniques. The buffer layer of B aTiO3 and PZT have been beneficial to grow crystalline quality TiNi fi lms on Si(100) substrates.