The effect of KrF excimer laser irradiation on aluminum nitride (AIN)
surface in air for different irradiation conditions has been analyzed
by Auger electron spectroscopy (AES), Raman spectroscopy and X-ray pho
toelectron spectroscopy (XPS) to monitor the changes in the chemical c
omposition of the near surface layer. Irradiation with pulses of fluen
ces exceeding 2 J/cm(2) results in formation of a thin film of aluminu
m on the AIN surface. This leads to an increase in the surface electri
cal conductivity. Local transformation of an insulator to a material w
ith a conducting surface in a small depth could be interesting for app
lications such as microelectronics where this material is used.