EPITAXIAL-GROWTH OF ND-YAG THIN-FILMS BY PULSED-LASER DEPOSITION

Authors
KUMAGAI H ADACHI K EZAKI M TOYODA K OBARA M
Citation
H. Kumagai et al., EPITAXIAL-GROWTH OF ND-YAG THIN-FILMS BY PULSED-LASER DEPOSITION, Applied surface science, 110, 1997, pp. 528-532
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
110
Year of publication
1997
Pages
528 - 532
Database
ISI
SICI code
0169-4332(1997)110:<528:EONTBP>2.0.ZU;2-8
Abstract
Epitaxial growth of Nd:Y3Al5O12 (Nd:YAG) films on SGGG (Zr- and Sc-dop ed Gd3Ga5O12) and YAG substrates by pulsed laser deposition using a Kr F excimer laser at substrate temperatures of 800 degrees C to 910 degr ees C was investigated. The composition of the films was investigated by Rutherford backscattering spectroscopy and the crystallinity by X-r ay diffraction analysis. The optical properties of Nd:YAG thin films w ere investigated by photoluminescence (PL) measurements. The PL spectr um of the Nd:YAG film on the YAG substrate exhibited F-4(3/2) --> I-4( 9/2) and F-4(3/2) --> I-4(11/2) transitions of Nd3+ ions in YAG which were almost the same as those of the Nd:YAG bulk crystal.