GROWTH OF TIC FILMS BY THERMAL LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION

The kinetics in thermal laser-assisted chemical vapour deposition (LCV D) of titanium carbide (TiC) films and the influence of growth conditi ons on the structure and morphology of the deposits have been investig ated. TiC spots were deposited onto silica substrates using a CW TEM(0 0) CO2 laser beam. The reaction gas mixture consisted of TiCl4, CH4 an d H-2 and the ratios of the partial pressures of the reactants were va ried. The films were analysed by X-ray diffractometry (XRD), micro-Ram an spectroscopy, scanning electron microscopy (SEM) and profilometry.