HIGH-FIELD HOPPING MOBILITY IN DISORDERED MOLECULAR-SOLIDS - A MONTE-CARLO STUDY OF OFF-DIAGONAL DISORDER EFFECTS

Citation
Yn. Gartstein et Em. Conwell, HIGH-FIELD HOPPING MOBILITY IN DISORDERED MOLECULAR-SOLIDS - A MONTE-CARLO STUDY OF OFF-DIAGONAL DISORDER EFFECTS, The Journal of chemical physics, 100(12), 1994, pp. 9175-9180
Citations number
18
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
ISSN journal
00219606
Volume
100
Issue
12
Year of publication
1994
Pages
9175 - 9180
Database
ISI
SICI code
0021-9606(1994)100:12<9175:HHMIDM>2.0.ZU;2-I
Abstract
In the model of high-field hopping studied extensively by Bassler and collaborators, disorder arising from the varying intersite wave functi on overlap (off-diagonal disorder) was incorporated by random assignme nt of an overlap decay rate to each site independently, admittedly an arguable procedure. We have carried out Monte Carlo simulations incorp orating assignment of a random overlap to each bond. The assumptions o f a Gaussian density of states and a Miller-Abrahams type of elementar y jump rate were retained. We find the value and field variation of th e mobility to be quite sensitive to the model of off-diagonal disorder considered. However, the results of our simulations may also be fitte d by an exponential dependence of mobility on the square root of field for some ranges of field and parameters of the disorder.