USE OF THE CHARGE-PUMPING TECHNIQUE TO UNDERSTAND NONUNIFORM N-CHANNEL MOSFET DEGRADATION

By using the charge pumping technique we have separated the interface state from the fixed charge effects when non-uniform MOSFET degradatio n is induced by hot-carrier injection under electrical stress. For n-c hannel MOSFETs we show that, after a hot-electron injection, hot-holes can also be injected into the gate oxide under the same stress condit ions. In this article we also show. by the study of static characteris tics before and after the electrical stress, that the transductance de gradation DELTAG(m) and the threshold voltage shift DELTAV(T) (induced by a maximum substrate current stress condition) follow an At(n) law, but with very different values of n.