CHEMICAL TREATMENT OF PHOTOLUMINESCENT POROUS SILICON

Authors
VADJIKAR RM JAIN B GUPTA PK NANDEDKAR RV BHAWALKAR DD PATNI MJ SRINIVASA R CHANDORKAR AN
Citation
Rm. Vadjikar et al., CHEMICAL TREATMENT OF PHOTOLUMINESCENT POROUS SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 23(2), 1994, pp. 120000013-120000015
Citations number
24
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
23
Issue
2
Year of publication
1994
Pages
120000013 - 120000015
Database
ISI
SICI code
0921-5107(1994)23:2<120000013:CTOPPS>2.0.ZU;2-0
Abstract
Porous silicon layers formed by electrochemical anodizing show photolu minescence in the visible region. We report on the effect of chemical treatments such as hydrofluoric acid dip, ammonium fluoride solution t reatment and boiling water treatment on the photoluminescence of porou s silicon. In view of our results the mechanism of photoluminescence o f porous silicon is discussed.