STRUCTURAL AND MATERIAL PROPERTIES OF TUNGSTEN SILICIDE FORMED AT LOW-TEMPERATURE

Authors
SINGH A KHOKLE WS LAL K
Citation
A. Singh et al., STRUCTURAL AND MATERIAL PROPERTIES OF TUNGSTEN SILICIDE FORMED AT LOW-TEMPERATURE, Vacuum, 45(8), 1994, pp. 867-869
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
45
Issue
8
Year of publication
1994
Pages
867 - 869
Database
ISI
SICI code
0042-207X(1994)45:8<867:SAMPOT>2.0.ZU;2-T
Abstract
A tungsten film is rf magnetron sputtered on silicon wafers and subseq uently subjected to 30 min novel discharge treatment in argon atmosphe re near the sputter threshold. Vacuum annealing in the temperature ran ge 500-650-degrees-C for 30 min is found to develop WSi2 with a sheet resistance of 6 OMEGA Sq-1. Both the temperature range used and the sh eet resistance obtained are lower than those reported by others. The s urface morphology is observed to be smooth and the end phase is tetrag onal tungsten silicide.