TI THIN-FILM REACTION ON SIO2 SI

This paper discusses 500 angstrom thick SiO2 layers formed on Si subst rates having a crystal surface of (100), (110) or (111), and their rea ctions with Ti films which are deposited on the layers at room tempera ture (RT) in UHV. In situ inspections were carried out, from RT to 800 -degrees-C, on the reacted film composition and film structure with AE S and LEED, respectively. RBS, XRD and XPS were also used to analyze t he interface, reacted components and formation energies. Results showe d that Ti films do indeed react with SiO2 layers at RT, and when annea led at 800-degrees-C, their reacted components show different characte ristics depending on the crystal surface of the substrate. The depende ncy on the crystal surface is explained using a simple calculation met hod of obtaining the minimum number of bonds of surface atoms.