ELECTRICAL-PROPERTIES OF SPUTTERED MNO2 THIN-FILMS

In a previous paper we have shown that it was possible to obtain low-r esistivity (1.5 OMEGA . cm) and stoichiometric MnO2 films by reactive cathodic sputtering of an Mn3O4 target. Thermogravimetric analysis, SI MS, and XRD techniques have been used to relate chemical and physical characteristics of the deposits to their electrical properties. The re sistivity of semiconducting manganese dioxide films is lowered (down t o 0.3 OMEGA . cm) by air annealing up to 450-degrees-C. This treatment also produces the thermal splitting off of oxygen from the sample. Th e initial presence of contaminating sodium clusters inside the films m ust have an influence on the electrical behaviour of air-reduced films .