HIGH LINEARITY POWER X-BAND GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/

Authors
LIU W KIM T IKALAINEN P KHATIBZADEH A
Citation
W. Liu et al., HIGH LINEARITY POWER X-BAND GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, IEEE electron device letters, 15(6), 1994, pp. 190-192
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
6
Year of publication
1994
Pages
190 - 192
Database
ISI
SICI code
0741-3106(1994)15:6<190:HLPXGG>2.0.ZU;2-W
Abstract
We report for the first time two-tone test results measured on a GaInP /GaAs HBT. A 2 x 400 mum2 device delivered more than 1.3 W under one-t one testing at 7.5 GHz and output more than 1 W under two-tone. The co rresponding intermodulation product is -14 dBc, and decreases to -21 a nd -36 dBc, respectively, at 3-dB and 10-dB back-off from the saturate d two-tone output. These results demonstrate that GaInP/GaAs HBT's are suitable for microwave transmitter applications.