HOT-CARRIER EFFECTS IN THIN-FILM FULLY DEPLETED SOI MOSFETS

Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electri c field (E(m)). Experimental results using SOI MOSFET's with body cont acts indicate that E(m) is just a weak function of thin-film SOT thick ness (T(si)) and that E(m) can be significantly lower than in a bulk d evice with drain junction depth (X(j)) comparable to SOI's T(si). The theoretical correlation between SOI MOSFET's gate current and substrat e current are experimentally confirmed. This provides a means (I(G)) o f studying E(m) in SOI device without body contacts. Thin-film SOI MOS FET's have better prospects for meeting breakdown voltage and hot-elec tron reliability requirements than previously thought.