EXCITED GEF2 FORMATION IN RF-GLOW-DISCHAR GE OF GEH4-CF4-H2 MIXTURES

Anomalous intense ultraviolet emission bands in the region 320-370 nm with a maximum at 340 nm were observed in radio frequency (rf) glow di scharges of CF4-H-2 mixtures containing 0.3-1% of GeH4. The correspond ing emission system was not observed in the discharge spectra of GeH4- CH4-H-2 and SiH4-CF4-H-2 mixtures. Intense ultraviolet emission bands around 340 nm were also measured in microwave and rf glow discharges o f GeF4. From the vibrational analysis of the bands, it was found that these 340 nm emission bands completely agree with weak emission system of GeF2, which has been tentatively assigned, in earlier work, as the B-3(1)-1A1 tarnsition. It confirmed that the emissive carrier is GeF2 and a rearrangement reaction occurs in the plasma of GeH4-CF4-H-2 mix tures.