CHARGE-TRANSFER DYNAMICS OF ELECTROCHEMICAL DARK AND PHOTOPROCESSES ON SEMICONDUCTORS .2. FERMI ENERGY CHARACTERISTICS AND PHOTOADMITTANCE FUNCTIONS

Relevant cases of photoadmittance functions of two-step hydrogen react ions on n-semiconductors are treated, following corresponding stationa rity conditions considered in Part I. As a major result, the evolution of photoadmittance structures from dark-admittance occurring in the c athodic regime of hydrogen reaction is explained on a coherent dynamic al level. Further, stationary Fermi energies and photoadmittance funct ions are calculated for coupled balances, taking into account the kine tics of n-semiconductor dissolution together with parallel hydrogen re action channels. Experimental comparisons have been made on n-GaAs.