GROWTH OF GAAS FROM GA SOLUTION UNDER REDUCED GRAVITY DURING THE D2-MISSION

Authors
DANILEWSKY AN NAGEL G BENZ KW
Citation
An. Danilewsky et al., GROWTH OF GAAS FROM GA SOLUTION UNDER REDUCED GRAVITY DURING THE D2-MISSION, Crystal research and technology, 29(2), 1994, pp. 171-178
Citations number
5
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
29
Issue
2
Year of publication
1994
Pages
171 - 178
Database
ISI
SICI code
0232-1300(1994)29:2<171:GOGFGS>2.0.ZU;2-2
Abstract
Tellurium-doped GaAs was grown under reduced gravity during the Second German Spacelab-Mission D2. The growth experiment MD-ELI-TRABE is des cribed and first results are presented.