THERMAL CYCLING, DLTS, AND PEC STUDIES ON LEC GALLIUM-ARSENIDE

Authors
SANTHANARAGHAVAN P SANKARANARAYANAN K AROKIARAJ J ANBUKUMAR S KUMAR J RAMASAMY P
Citation
P. Santhanaraghavan et al., THERMAL CYCLING, DLTS, AND PEC STUDIES ON LEC GALLIUM-ARSENIDE, Crystal research and technology, 29(2), 1994, pp. 223-228
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
29
Issue
2
Year of publication
1994
Pages
223 - 228
Database
ISI
SICI code
0232-1300(1994)29:2<223:TCDAPS>2.0.ZU;2-9
Abstract
This paper discusses the growth of gallium arsenide single crystals us ing the LEC technique. The Semi-insulating gallium arsenide was studie d. The defect investigations were made by DLTS and etching studies. Th e variation of deep level concentration along the wafer was estimated using DLTS. The fabrication and efficiency of the PEC Solar cells are also reported.