Thin film solar cells have been prepared and investigated by using ind
ium-doped n-CdSe in conjunction with p-ZnTe. The films are prepared on
indium tin oxide (ITO) coated glass substrates by the thermal evapora
tion. Thin film layers have been deposited without breaking vacuum by
utilizing a mask rotating system. Silver has been used as a stimulator
for bringing improvement in the crystallinity and electrical behaviou
r of ZnTe thin films. Indium is used for obtaining the back ohmic cont
acts. The solar cells thus produced have been characterized by I-V-, C
-V-, and spectral response measurements. The maximum open circuit vol
tage, the short circuit current density, and the efficiency are obtain
ed as 415 mV, 11.60 mA cm-2 and 1.86%, respectively under 100 mW cm-2
input optical power. The diffusion potential and depletion width are f
ound to be 1.42 eV and 21 nm, respectively.