FABRICATION AND CHARACTERIZATION OF ZNTE CDSE THIN-FILM SOLAR-CELLS/

Citation
Ng. Patel et al., FABRICATION AND CHARACTERIZATION OF ZNTE CDSE THIN-FILM SOLAR-CELLS/, Crystal research and technology, 29(2), 1994, pp. 247-252
Citations number
7
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
29
Issue
2
Year of publication
1994
Pages
247 - 252
Database
ISI
SICI code
0232-1300(1994)29:2<247:FACOZC>2.0.ZU;2-G
Abstract
Thin film solar cells have been prepared and investigated by using ind ium-doped n-CdSe in conjunction with p-ZnTe. The films are prepared on indium tin oxide (ITO) coated glass substrates by the thermal evapora tion. Thin film layers have been deposited without breaking vacuum by utilizing a mask rotating system. Silver has been used as a stimulator for bringing improvement in the crystallinity and electrical behaviou r of ZnTe thin films. Indium is used for obtaining the back ohmic cont acts. The solar cells thus produced have been characterized by I-V-, C -V-, and spectral response measurements. The maximum open circuit vol tage, the short circuit current density, and the efficiency are obtain ed as 415 mV, 11.60 mA cm-2 and 1.86%, respectively under 100 mW cm-2 input optical power. The diffusion potential and depletion width are f ound to be 1.42 eV and 21 nm, respectively.