FORMATION OF CRSI2 STUDIES BY RUTHERFORD BACKSCATTERING SPECTROMETRY

Authors
TOBBECHE S BENAZZOUZ C BOUSSAA N ZILABDI M BENOUATAS A BOUABELLOU A HALIMI R
Citation
S. Tobbeche et al., FORMATION OF CRSI2 STUDIES BY RUTHERFORD BACKSCATTERING SPECTROMETRY, Vacuum, 45(4), 1994, pp. 421-422
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
45
Issue
4
Year of publication
1994
Pages
421 - 422
Database
ISI
SICI code
0042-207X(1994)45:4<421:FOCSBR>2.0.ZU;2-9
Abstract
Rutherford backscattering spectrometry (RBS) is used to study the grow th of Cr silicides formed by thin film reactions. Thin films of Cr wer e deposited on phosphorus-implanted silicon and unimplanted silicon su bstrates. Thermal annealing was subsequently carried out. The analysis has shown a growth of a CrSi2 phase and allowed the determination of formation kinetics. A retardation effect of the CrSi2 growth is observ ed in the case of the phosphorus-implanted silicon substrate.