MEMORY SWITCHING PHENOMENA IN THIN-FILMS OF CHALCOGENIDE SEMICONDUCTORS

Authors
HEGAB NA FADEL M SEDEEK K
Citation
Na. Hegab et al., MEMORY SWITCHING PHENOMENA IN THIN-FILMS OF CHALCOGENIDE SEMICONDUCTORS, Vacuum, 45(4), 1994, pp. 459-462
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
45
Issue
4
Year of publication
1994
Pages
459 - 462
Database
ISI
SICI code
0042-207X(1994)45:4<459:MSPITO>2.0.ZU;2-I
Abstract
The current-voltage characteristic in the OFF- state and the switching phenomenon are investigated in Ge20M75Bi5 (M = S, Se or Te) chalcogen ide semiconductor thin films. The threshold switching voltage V(th) wa s found to increase linearly with the film thickness. The behaviour of the switching voltage V(th) with temperature aging from room temperat ure to 353 K which follows an exponential variation was also investiga ted. The results obtained support an electrothermal model for initiati ng switching in these systems.