INHOMOGENEITY IN SEMICONDUCTOR-FILMS - AN ANALYSIS FROM OPTICAL STUDIES

Citation
Ab. Maity et al., INHOMOGENEITY IN SEMICONDUCTOR-FILMS - AN ANALYSIS FROM OPTICAL STUDIES, Vacuum, 45(4), 1994, pp. 483-486
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
45
Issue
4
Year of publication
1994
Pages
483 - 486
Database
ISI
SICI code
0042-207X(1994)45:4<483:IIS-AA>2.0.ZU;2-G
Abstract
A method for determining the volume fraction of crystalline phase in a thin film with a mixed phase (amorphous and crystalline) from reflect ance measurements is presented here. The theory has been successfully applied to find out the relative amounts of amorphous and crystalline phases present in tellurium films deposited at various substrate tempe ratures.