POLARIZATION DEPENDENCE OF LINEWIDTH ENHANCEMENT FACTOR IN INGAAS INGAASP MQW MATERIAL/

Authors
JEPSEN KS STORKFELT N VAA M STUBKJAER KE
Citation
Ks. Jepsen et al., POLARIZATION DEPENDENCE OF LINEWIDTH ENHANCEMENT FACTOR IN INGAAS INGAASP MQW MATERIAL/, IEEE journal of quantum electronics, 30(3), 1994, pp. 635-639
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
30
Issue
3
Year of publication
1994
Pages
635 - 639
Database
ISI
SICI code
0018-9197(1994)30:3<635:PDOLEF>2.0.ZU;2-K
Abstract
Measurements and calculations on the differential gain, the differenti al refractive index, and the linewidth enhancement factor have been pe rformed for unstrained quantum-well (QW) material. The differential re fractive index is considerably lower for the transverse magnetic (TM) polarization than for the transverse electric (TE) polarization, which is ascribed to absence of the plasma effect for the TM polarization. This has implications for the linewidth enhancement factor and thus li newidth and chirp in QW lasers.