A SUPERLUMINESCENT DIODE AT 1.3 MU-M WITH VERY-LOW SPECTRAL MODULATION

Authors
PATTERSON BD EPLER JE GRAF B LEHMANN HW SIGG HC
Citation
Bd. Patterson et al., A SUPERLUMINESCENT DIODE AT 1.3 MU-M WITH VERY-LOW SPECTRAL MODULATION, IEEE journal of quantum electronics, 30(3), 1994, pp. 703-712
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
30
Issue
3
Year of publication
1994
Pages
703 - 712
Database
ISI
SICI code
0018-9197(1994)30:3<703:ASDA1M>2.0.ZU;2-#
Abstract
An edge-emitting superluminescent diode has been fabricated from an MO CVD-grown InGaAsP/InP double heterostructure, for light emission at 1. 3 mum. Using a ridge-waveguide geometry with an integrated absorber, t he goals of high power coupled into a single-mode fiber and very low s pectral modulation are fulfilled. Interferometric measurements of the residual modulation determine the location of internal optical reflect ions in the device. The results are interpreted and compared to the pr edictions of a transmission-line model.