THERMAL COMPARISON OF LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES

Authors
PIPREK J YOO SJB
Citation
J. Piprek et Sjb. Yoo, THERMAL COMPARISON OF LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES, Electronics Letters, 30(11), 1994, pp. 866-868
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
11
Year of publication
1994
Pages
866 - 868
Database
ISI
SICI code
0013-5194(1994)30:11<866:TCOLVS>2.0.ZU;2-E
Abstract
Heat flow finite element analysis is applied to basic device concepts, including planar structures with InGaAsP/InP or AlAs/GaAs substrate s ide mirrors (mounted top-up or top-down) and etched-well lasers with S i/SiO2 dielectric mirrors. In several cases, the calculated thermal re sistance values are higher than with short-wavelength devices, but waf er-fused structures on GaAs substrate show clear thermal advantages.