STRAIN-COMPENSATED MQW ELECTROABSORPTION MODULATOR FOR INCREASED OPTICAL POWER HANDLING

Authors
CZAJKOWSKI IK GIBBON MA THOMPSON GHB GREENE PD SMITH AD SILVER M
Citation
Ik. Czajkowski et al., STRAIN-COMPENSATED MQW ELECTROABSORPTION MODULATOR FOR INCREASED OPTICAL POWER HANDLING, Electronics Letters, 30(11), 1994, pp. 900-901
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
11
Year of publication
1994
Pages
900 - 901
Database
ISI
SICI code
0013-5194(1994)30:11<900:SMEMFI>2.0.ZU;2-O
Abstract
InGaAsP MQW electroabsorption modulators with compressive strain in th e wells and tensile strain m the barriers provide easer escape of phot ogenerated holes and operate at higher intensities before suffering sa turation. Hole escape from wells is enhanced by a reduced energy diffe rence between heavy-hole states in the well and light-hole states in t he barrier.