1W MM POWER PSEUDOMORPHIC HFET WITH OPTIMIZED RECESS TECHNOLOGY/

The authors report record DC characteristics and RF performances of a power double heterostructure (DH) pseudomorphic (PM) InGaAs quantum we ll HFET. The device, with a 0.3 x 70mum2 gate, exhibits an intrinsic t ransconductance as high as 720mS/mm, a maximum current density of appr oximately 1A/mm and delivers a state-of-the-art output power density o f 1W/mm with 5.7dB linear gain and 38% power added efficiency at 33GHz . A detailed analysis of the technological aspects and electrical char acteristics of the device is proposed to explain these excellent perfo rmances.