ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN

Authors
BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K GASKILL DK
Citation
Sc. Binari et al., ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN, Electronics Letters, 30(11), 1994, pp. 909-911
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
11
Year of publication
1994
Pages
909 - 911
Database
ISI
SICI code
0013-5194(1994)30:11<909:ECOTSB>2.0.ZU;2-#
Abstract
The Schottky barrier height of Ti on n-type GaN has been measured to b e 0.58 and 0.59eV by capacitance-voltage and current-voltage technique s, respectively. This work is of particular interest because it is the first measure of the Schottky barrier height on GaN for a metal other than Au. The barrier height of Ti on GaN is significantly less than t hat of Au. This supports the prediction that the Fermi level is not pi nned at the GaN surface.