TRANSIENT PROCESSES DURING PORE FORMATION IN N-TYPE SILICON

Nonequilibrium processes occurring in an electrolyte-semiconductor sys tem (hydrofluoric acid-n-type silicon) were studied during anodization in the mode of pore formation. The transition from transient modes of anodization with strongly nonlinear current-voltage characteristics t o steady-state conditions was studied. The current-voltage curves obta ined experimentally for the electrolyte-semiconductor (silicon) system is S-shaped. Processes of self-organization developing at the silicon ' surface in the above system under the action of ultrasound were dete cted and experimentally investigated. The major aspects of these proce sses are concordant with those of the formation of three-dimensionally periodic structures at surfaces stimulated by laser light that had be en studied previously.