PRESSURE-DEPENDENCE OF BAND OFFSETS IN INAS GA1-XINXSB SUPERLATTICES/

We have determined the pressure dependence of the valence-band offset between InAs and Ga1-xInxSb (x similar to 0.25) by measuring the midin frared photoluminescence (PL) of two InAs/Ga1-xInxSb super lattice sam ples at liquid nitrogen temperature under hydrostatic pressures up to 40 kbar. The PL peaks move to higher energy with pressure at rates of 8.3+/-0.1 and 8.8+/-0.3 meV/kbar for the two samples. By comparing the se results with a calculation based on the envelope function formalism , we deduced the pressure dependences of the valence-band offset betwe en InAs and Ga1-xInxSb of these samples to be 3.5+/-1.6 and 5.6+/-2.5 meV/kbar, respectively. These values are compared with the results of transport measurements on InAs/Ga1-xInxSb (x less than or equal to 0.1 ) as well as a theoretical prediction for InAs/GaSb based on the model solid theory.