B. Bhattacharjee et Sk. Rangarajan, MULTICOMPONENT MULTILAYER RANDOM IRREVERSIBLE DEPOSITION MODEL .1. A MEAN-FIELD STUDY, Journal of electroanalytical chemistry [1992], 370(1-2), 1994, pp. 41-51
A general mean field formalism for the two-component multilayer compet
itive growth processes by random irreversible deposition is presented.
Overhangs and screening effects are ignored. The effects of the indiv
idual rates of the elementary act of deposition on the extent of growt
h, the overall growth rates (or currents) of the individual components
and the composition at each deposited layer and in the bulk of the de
posit are analysed. Transient and asymptotic behaviours of such quanti
ties are derived. Various limiting growth situations of practical impo
rtance, namely poisoning of the growth of one component by the other,
blocking of the multilayer growth by the monolayer coating of one of t
he components etc., are discussed in detail as special cases. Generali
zation of the formalism for more than two components is also indicated
.