MICROSTRUCTURE OF EPITAXIAL OXIDE THIN-FILM HETEROSTRUCTURES ON SILICON BY PULSED-LASER DEPOSITION

Authors
GHONGE SG GOO E RAMESH R HAAKENAASEN R FORK DK
Citation
Sg. Ghonge et al., MICROSTRUCTURE OF EPITAXIAL OXIDE THIN-FILM HETEROSTRUCTURES ON SILICON BY PULSED-LASER DEPOSITION, Applied physics letters, 64(25), 1994, pp. 3407-3409
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
25
Year of publication
1994
Pages
3407 - 3409
Database
ISI
SICI code
0003-6951(1994)64:25<3407:MOEOTH>2.0.ZU;2-D
Abstract
The microstructure of epitaxial La0.5Sr0.5CoO3(LSCO)/ferroelectric lan thanum modified lead zirconate titanate (PLZT)/La0.5Sr0.5CoO3(LSCO)/bi smuth titanate(BT)/yttria-stabilized zirconia (YSZ) heterostructures o n [001] silicon has been investigated. X-ray diffraction and pole figu re analysis reveal epitaxial growth of the PLZT, LSCO, BT, and YSZ lay ers. High resolution transmission electron microscopy was done to stud y the crystal defects and interfacial structure.