GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES

Citation
Yh. Zhang et al., GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES, Applied physics letters, 64(25), 1994, pp. 3416-3418
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
64
Issue
25
Year of publication
1994
Pages
3416 - 3418
Database
ISI
SICI code
0003-6951(1994)64:25<3416:GCORTT>2.0.ZU;2-Z
Abstract
We have observed periodic current and capacitance oscillations with in creasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geomet ric capacitances in superlattices, being comparable to the quantum cap acitance of the two-dimensional (2D) electron system proposed by Luryi . A model based on well-to-well sequential resonant tunneling due to t he movement of the boundary between the electric field domains in supe rlattice was proposed to explain the origin of the giant capacitance o scillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacit ance of the space-charge region at the boundary between the domains (a novel 2D electron system).