Yh. Zhang et al., GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES, Applied physics letters, 64(25), 1994, pp. 3416-3418
We have observed periodic current and capacitance oscillations with in
creasing bias on doped GaAs/AlAs superlattices at a temperature of 77
K. The maximum of the observed capacitance is larger than usual geomet
ric capacitances in superlattices, being comparable to the quantum cap
acitance of the two-dimensional (2D) electron system proposed by Luryi
. A model based on well-to-well sequential resonant tunneling due to t
he movement of the boundary between the electric field domains in supe
rlattice was proposed to explain the origin of the giant capacitance o
scillations. It was demonstrated that the capacitance at the peaks of
capacitance-voltage (C-V) characteristics reflects the quantum capacit
ance of the space-charge region at the boundary between the domains (a
novel 2D electron system).