HIGH-PERFORMANCE INGAAS GAAS QUANTUM-WELL INFRARED PHOTODETECTORS

Authors
GUNAPALA SD BANDARA KMSV LEVINE BF SARUSI G PARK JS LIN TL PIKE WT LIU JK
Citation
Sd. Gunapala et al., HIGH-PERFORMANCE INGAAS GAAS QUANTUM-WELL INFRARED PHOTODETECTORS, Applied physics letters, 64(25), 1994, pp. 3431-3433
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
25
Year of publication
1994
Pages
3431 - 3433
Database
ISI
SICI code
0003-6951(1994)64:25<3431:HIGQIP>2.0.ZU;2-C
Abstract
We have measured the optical and transport properties of In0.2Ga0.8As/ GaAs quantum well infrared photodetectors based on bound-to-bound, bou nd-to-quasibound, and bound-to-continuum intersubband transitions. Exc ellent hot electron transport and high detectivity D=1.8X10(10) cm sq uare-root Hz/W (at lambda(p)=16.7 mum) were achieved at temperature T= 40 K.