ELECTRICAL BAND-GAP OF POROUS SILICON

Authors
CHEN ZL LEE TY BOSMAN G
Citation
Zl. Chen et al., ELECTRICAL BAND-GAP OF POROUS SILICON, Applied physics letters, 64(25), 1994, pp. 3446-3448
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
25
Year of publication
1994
Pages
3446 - 3448
Database
ISI
SICI code
0003-6951(1994)64:25<3446:EBOPS>2.0.ZU;2-9
Abstract
The electrical band gap of porous silicon is determined from measureme nts of the reverse bias current of homojunction pn porous silicon diod es versus temperature, resulting in a value of 2.2 eV. This value is i n good agreement with the value of 1.97 eV obtained from photo- and el ectroluminescence experiments.