LINKS BETWEEN OXIDE, INTERFACE, AND BORDER TRAPS IN HIGH-TEMPERATURE ANNEALED SI SIO2 SYSTEMS

Evidence is provided to show that enhanced hole-, interface-, and bord er-trap generation in irradiated high-temperature annealed Si/SiO2/Si systems are all related either directly, or indirectly, to the presenc e of oxygen vacancies. We find that the calculated oxygen vacancy due to high-temperature anneals from 800 to 950-degrees-C in metal-oxide-s emiconductor capacitors closely matches the radiation-induced oxide-tr apped charge. This strongly suggests that oxygen vacancies (or vacancy -related complexes) are the dominant hole trapping sites in this parti cular case. Along with the increase in radiation-induced oxide-trap ch arge, we observe a concomitant increase in the interface- and border-t rap densities. This suggests that in devices that receive high-tempera ture anneals, all these phenomena are linked to the existence of oxyge n vacancies either directly, or indirectly, perhaps via hole trapping at these vacancies.