R. Samlenski et al., CHARACTERIZATION OF STRUCTURE AND DEFECTS IN TEXTURED DIAMOND FILMS BY ION CHANNELING, DIAMOND AND RELATED MATERIALS, 3(8), 1994, pp. 1091-1096
Polycrystalline diamond (PCD) films were deposited by microwave-plasma
-assisted chemical vapour deposition (CVD) under various growth condit
ions. The PCD films under investigation exhibit a [100] texture and th
e surface is formed by almost coplanar {100) faces. To characterize th
e structure and morphology of the PCD films, the ion channelling techn
ique was employed. The angular dependence of backscattered megaelectro
nvolt protons around the texture axis of the PCD films has been invest
igated. Two dominant dechannelling contributions, i.e. the shape of th
e distribution of the diamond crystallite orientation and the density
of scattering centres, could separately be deduced by comparing the po
lycrystalline and single-crystal angular yields. The growth parameter
determined, i.e. alpha = 3 1/2 x V100/V111 and the spread of the orien
tational distribution are in agreement with data obtained by other str
uctural characterization techniques. The density of scattering centres
obtained in the PCD films exhibits a strong dependence on the relativ
e amount of {111} facets and is almost proportional to the ratio of th
e {111} growth sectors to the {100} growth sectors at the film surface
.