EFFECT OF ION-IMPLANTATION ON ION-PLATED DIAMOND-LIKE CARBON-FILMS

Citation
H. Watanabe et al., EFFECT OF ION-IMPLANTATION ON ION-PLATED DIAMOND-LIKE CARBON-FILMS, DIAMOND AND RELATED MATERIALS, 3(8), 1994, pp. 1117-1119
Citations number
5
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
3
Issue
8
Year of publication
1994
Pages
1117 - 1119
Database
ISI
SICI code
0925-9635(1994)3:8<1117:EOIOID>2.0.ZU;2-B
Abstract
A Raman spectroscopic study has been carried out on the effects of ion implantation of argon or nitrogen on the structures of ion-plated dia mond-like carbon (DLC) films. The carbon films were deposited on WC su bstrates at room temperature, 200, 250, 300 and 350-degrees-C. Implant ation of 150 keV Ar+ or N+ into the films was carried out with a dose of 1 x 10(16) ion cm-2 at room temperature. The structure of the carbo n films was estimated by laser Raman spectroscopy. It was found that t he Raman spectra for non-implanted and implanted DLC films consisted o f four main peaks: two well-known peaks belonging to graphite and long -ranged-disordered graphite structures, and two other new peaks which can be considered as follows. One peak corresponds to an amorphous-lik e structure with C=C bonding, and the other peak corresponds to a kind of hydrogenated-like carbon with chains of alternate C=C and C-C bond s. The as-deposited DLC films had various structures, depending on the ion plating conditions. Ion implantation in DLC specimens changed the ir structures, making them the same. It is expected that an equilibriu m of mutual transfer (amorphous half arrow right over half left -graph ite) was achieved during ion implantation.