SIC FOR SENSORS AND HIGH-TEMPERATURE ELECTRONICS

Authors
Citation
G. Muller et G. Krotz, SIC FOR SENSORS AND HIGH-TEMPERATURE ELECTRONICS, Sensors and actuators. A, Physical, 43(1-3), 1994, pp. 259-268
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
43
Issue
1-3
Year of publication
1994
Pages
259 - 268
Database
ISI
SICI code
0924-4247(1994)43:1-3<259:SFSAHE>2.0.ZU;2-6
Abstract
The paper presents an overview of recent developments in the SiC field . Within this field, two main streams are emerging: on the one hand, t he commercial availability of bulk SiC crystals is likely to establish SiC as a new wafer technology which allows many devices to be fabrica ted in analogy to known Si ones. In this way, the high-temperature lim it for the operation of sensors and electronic circuits can be signifi cantly extended. Thin films of SiC, on the other hand, can be used as an add-on to the existing Si technology. Using such films, new possibi lities emerge with regard to the fabrication of microsensors. Applicat ions of thin-film SiC in optics, optoelectronics and micromachining ar e demonstrated.