FORMATION EFFICIENCY OF THE THERMOSTABLE RECOMBINATION CENTERS IN IRRADIATED SILICON P-N STRUCTURES

Authors
KORSHUNOV FP ZHDANOVICH NE MARCHENKO IG TROSHCHINSKY VT
Citation
Fp. Korshunov et al., FORMATION EFFICIENCY OF THE THERMOSTABLE RECOMBINATION CENTERS IN IRRADIATED SILICON P-N STRUCTURES, Doklady Akademii nauk BSSR, 40(5), 1996, pp. 49-53
Citations number
15
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
40
Issue
5
Year of publication
1996
Pages
49 - 53
Database
ISI
SICI code
0002-354X(1996)40:5<49:FEOTTR>2.0.ZU;2-L