CONFIGURATIONAL STATISTICAL-MODEL FOR THE DAMAGED STRUCTURE OF SILICON-OXIDE AFTER ION-IMPLANTATION

A configurational model for silicon oxide damaged after a high-dose io n implantation of a nonreactive species is presented. Based on statist ics of silicon-centered tetrahedra, the model takes into account not o nly the closest environment of a given silicon atom, but also the seco nd neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by aver aging over the distributions and these results are in agreement with t he ones obtained from infrared experimental spectra. Likewise, the che mical shifts obtained from x-ray photoelectron spectroscopy (XPS) anal ysis are similar to the reported values for the charge-transfer model of SiO(x) compounds.