DYNAMICS OF LOCALIZED EXCITON RECOMBINATION AND MIGRATION IN GAAS MULTIPLE-QUANTUM WELLS

Authors
HUANG XG CAI ZG YU ZX
Citation
Xg. Huang et al., DYNAMICS OF LOCALIZED EXCITON RECOMBINATION AND MIGRATION IN GAAS MULTIPLE-QUANTUM WELLS, Journal of luminescence, 60-1, 1994, pp. 368-370
Citations number
6
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
60-1
Year of publication
1994
Pages
368 - 370
Database
ISI
SICI code
0022-2313(1994)60-1:<368:DOLERA>2.0.ZU;2-A
Abstract
A theory on the dynamics of localized exciton recombination and their intralayer migration in GaAs quantum wells is developed. Non-exponenti al photoluminescence decay is successfully interpreted by exciton reco mbination and its influence on the quasi-equilibrium localized exciton population. The recombination rate and the effective down-migration r ate can be obtained.