RESONANT PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY ON DONOR AND ACCEPTOR STATES IN DOPED ZNTE EPILAYERS

The paper reports investigations on Ga, Al, I and Cl donors and As, P and N acceptors in ZnTe epilayers. The shallow acceptor nitrogen was s tudied for the first time. Excited acceptor and donor states were obse rved with resonant photoluminescence (PL). The parameters mu and delta are derived from excited acceptor states which allow to calculate the Luttinger parameters. We also calculated the donor binding energies a nd found that the incorporation of group VII elements gives rise to a strong donor acceptor pair luminescence with zero-phonon lines at abou t 2.24 eV.