PHOTOLUMINESCENCE IN CZOCHRALSKI AND HYDROTHERMALLY GROWN BISMUTH SILICON-OXIDE

Citation
Dw. Hart et al., PHOTOLUMINESCENCE IN CZOCHRALSKI AND HYDROTHERMALLY GROWN BISMUTH SILICON-OXIDE, Journal of luminescence, 60-1, 1994, pp. 578-580
Citations number
12
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
60-1
Year of publication
1994
Pages
578 - 580
Database
ISI
SICI code
0022-2313(1994)60-1:<578:PICAHG>2.0.ZU;2-O
Abstract
Excitation with band edge light at low temperatures produces an emissi on near 2.9 eV in both hydrothermally and Czochralski grown Bi12SiO20 samples. The emission band is much stronger in the hydrothermal sample s. It disappears when the samples are heated to 50 K. A weak 1.9 eV em ission is also observed in the Czochralski samples. This emission grow s when the 2.9 eV decays near 50 K and then goes out between 100 and 1 50 K.