HIGH-DENSITY EXCITON BEHAVIOR AND BI-EXCITON STATES ON THE STACKING-FAULT EXCITONS IN BII(3)

Authors
KONDO H KARASAWA T AKAI I ICHIDA M KOMATSU T
Citation
H. Kondo et al., HIGH-DENSITY EXCITON BEHAVIOR AND BI-EXCITON STATES ON THE STACKING-FAULT EXCITONS IN BII(3), Journal of luminescence, 60-1, 1994, pp. 658-660
Citations number
5
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
60-1
Year of publication
1994
Pages
658 - 660
Database
ISI
SICI code
0022-2313(1994)60-1:<658:HEBABS>2.0.ZU;2-K
Abstract
The high density effects of excitons excited at a two-dimensional stac king-fault plane in layered BiI3 crystal is investigated. The blue-shi ft and broadening have been observed for the high density excitation. A new transition appears below the resonance exciton energies, which i s attributed to the two-photon transition to a bi-exciton state.